Vishay Siliconix SI2333DS-T1-E3
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- SI2333DS-T1-E3
- Vishay Siliconix
- MOSFET P-CH 12V 4.1A SOT23-3
- Transistors - FETs, MOSFETs - Single
- SI2333DS-T1-E3 Лист данных
- TO-236-3, SC-59, SOT-23-3
- Bulk
-
Lead free / RoHS Compliant - 28885
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number SI2333DS-T1-E3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET P-CH 12V 4.1A SOT23-3 |
| Package Bulk |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package SOT-23-3 (TO-236) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 750mW (Ta) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 12 V |
| Current - Continuous Drain (Id) @ 25°C 4.1A (Ta) |
| Rds On (Max) @ Id, Vgs 32mOhm @ 5.3A, 4.5V |
| Vgs(th) (Max) @ Id 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 18 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds 1100 pF @ 6 V |
| Vgs (Max) ±8V |
| Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V |
| Package_case TO-236-3, SC-59, SOT-23-3 |
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