Vishay Siliconix SI2316DS-T1-E3
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- SI2316DS-T1-E3
- Vishay Siliconix
- MOSFET N-CH 30V 2.9A SOT23-3
- Transistors - FETs, MOSFETs - Single
- SI2316DS-T1-E3 Лист данных
- TO-236-3, SC-59, SOT-23-3
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 8399
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number SI2316DS-T1-E3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 30V 2.9A SOT23-3 |
| Package Tape & Reel (TR) |
| Series TrenchFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package SOT-23-3 (TO-236) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 700mW (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 2.9A (Ta) |
| Rds On (Max) @ Id, Vgs 50mOhm @ 3.4A, 10V |
| Vgs(th) (Max) @ Id 800mV @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 215 pF @ 15 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case TO-236-3, SC-59, SOT-23-3 |
SI2316DS-T1-E3 Гарантии
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