STMicroelectronics SCTW35N65G2V
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- SCTW35N65G2V
- STMicroelectronics
- SICFET N-CH 650V 45A HIP247
- Transistors - FETs, MOSFETs - Single
- SCTW35N65G2V Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant - 1538
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number SCTW35N65G2V |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer STMicroelectronics |
| Description SICFET N-CH 650V 45A HIP247 |
| Package Tube |
| Series Automotive, AEC-Q101 |
| Operating Temperature -55°C ~ 200°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package HiP247™ |
| Technology SiCFET (Silicon Carbide) |
| Power Dissipation (Max) 240W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 45A (Tc) |
| Rds On (Max) @ Id, Vgs 67mOhm @ 20A, 20V |
| Vgs(th) (Max) @ Id 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 73 nC @ 20 V |
| Input Capacitance (Ciss) (Max) @ Vds 1370 pF @ 400 V |
| Vgs (Max) +22V, -10V |
| Drive Voltage (Max Rds On, Min Rds On) 18V, 20V |
| Package_case TO-247-3 |
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