STMicroelectronics SCTW90N65G2V
- SCTW90N65G2V
- STMicroelectronics
- SICFET N-CH 650V 90A HIP247
- Transistors - FETs, MOSFETs - Single
- SCTW90N65G2V Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant
- 3481
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number SCTW90N65G2V |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer STMicroelectronics |
Description SICFET N-CH 650V 90A HIP247 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 200°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package HiP247™ |
Technology SiCFET (Silicon Carbide) |
Power Dissipation (Max) 390W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 650 V |
Current - Continuous Drain (Id) @ 25°C 90A (Tc) |
Rds On (Max) @ Id, Vgs 25mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 157 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 400 V |
Vgs (Max) +22V, -10V |
Drive Voltage (Max Rds On, Min Rds On) 18V |
Package_case TO-247-3 |
SCTW90N65G2V Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
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STMicroelectronics
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