Rohm Semiconductor RSD175N10TL
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- RSD175N10TL
- Rohm Semiconductor
- MOSFET N-CH 100V 17.5A CPT3
- Transistors - FETs, MOSFETs - Single
- RSD175N10TL Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Jinftry-Reel®
-
Lead free / RoHS Compliant - 1242
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number RSD175N10TL |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rohm Semiconductor |
| Description MOSFET N-CH 100V 17.5A CPT3 |
| Package Jinftry-Reel® |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package CPT3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 20W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 17.5A (Ta) |
| Rds On (Max) @ Id, Vgs 105mOhm @ 8.8A, 10V |
| Vgs(th) (Max) @ Id 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 950 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4V, 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
RSD175N10TL Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о RSD175N10TL ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
RSD175N10TL сопутствующие товары
Комментарии
Rohm Semiconductor
RF4E080BNTR
MOSFET N-CH 30V 8A HUML2020L8
RV2C001ZPT2L
MOSFET N-CH 30V 8A HUML2020L8
RHU002N06T106
MOSFET N-CH 30V 8A HUML2020L8
RUM002N02T2L
MOSFET N-CH 30V 8A HUML2020L8
RV1C001ZPT2L
MOSFET N-CH 30V 8A HUML2020L8
RCX300N20
MOSFET N-CH 30V 8A HUML2020L8
R5013ANXFU6
MOSFET N-CH 30V 8A HUML2020L8
RYC002N05T316
MOSFET N-CH 30V 8A HUML2020L8
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
