Rohm Semiconductor RF4E080BNTR
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- RF4E080BNTR
- Rohm Semiconductor
- MOSFET N-CH 30V 8A HUML2020L8
- Transistors - FETs, MOSFETs - Single
- RF4E080BNTR Лист данных
- 8-PowerUDFN
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 5296
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number RF4E080BNTR |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rohm Semiconductor |
| Description MOSFET N-CH 30V 8A HUML2020L8 |
| Package Cut Tape (CT) |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerUDFN |
| Supplier Device Package HUML2020L8 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2W (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 30 V |
| Current - Continuous Drain (Id) @ 25°C 8A (Ta) |
| Rds On (Max) @ Id, Vgs 17.6mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 14.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 15 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 8-PowerUDFN |
RF4E080BNTR Гарантии
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