Rohm Semiconductor RQ3G100GNTB
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- RQ3G100GNTB
- Rohm Semiconductor
- MOSFET N-CH 40V 10A 8HSMT
- Transistors - FETs, MOSFETs - Single
- RQ3G100GNTB Лист данных
- 8-PowerVDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 3716
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number RQ3G100GNTB |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Rohm Semiconductor |
| Description MOSFET N-CH 40V 10A 8HSMT |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerVDFN |
| Supplier Device Package 8-HSMT (3.2x3) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2W (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 40 V |
| Current - Continuous Drain (Id) @ 25°C 10A (Ta) |
| Rds On (Max) @ Id, Vgs 14.3mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 615 pF @ 20 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
| Package_case 8-PowerVDFN |
RQ3G100GNTB Гарантии
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The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
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Maximum reverse voltage: 100V
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Maximum working temperature: 150°C
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