Rohm Semiconductor RQ1E070RPTR
- RQ1E070RPTR
- Rohm Semiconductor
- MOSFET P-CH 30V 7A TSMT8
- Transistors - FETs, MOSFETs - Single
- RQ1E070RPTR Лист данных
- 8-SMD, Flat Lead
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 1027
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number RQ1E070RPTR |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Rohm Semiconductor |
Description MOSFET P-CH 30V 7A TSMT8 |
Package Tape & Reel (TR) |
Series - |
Operating Temperature 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SMD, Flat Lead |
Supplier Device Package TSMT8 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 550mW (Ta) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 7A (Ta) |
Rds On (Max) @ Id, Vgs 17mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id 2.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 10 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V |
Package_case 8-SMD, Flat Lead |
RQ1E070RPTR Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о RQ1E070RPTR ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Rohm Semiconductor
R6004ENDTL
MOSFET N-CH 600V 4A CPT3
RSH070N05TB1
MOSFET N-CH 600V 4A CPT3
RRQ045P03TR
MOSFET N-CH 600V 4A CPT3
RSQ045N03TR
MOSFET N-CH 600V 4A CPT3
RSQ020N03TR
MOSFET N-CH 600V 4A CPT3
RF4C050APTR
MOSFET N-CH 600V 4A CPT3
R6020ENX
MOSFET N-CH 600V 4A CPT3
R8005ANX
MOSFET N-CH 600V 4A CPT3
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4