Renesas NE58219-T1-A
- NE58219-T1-A
- Renesas
- NPN SILICON AMPLIFIER AND OSCILL
- Transistors - Bipolar (BJT) - RF
- NE58219-T1-A Лист данных
- SC-75, SOT-416
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 6378
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number NE58219-T1-A |
Category Transistors - Bipolar (BJT) - RF |
Manufacturer Renesas |
Description NPN SILICON AMPLIFIER AND OSCILL |
Package Tape & Reel (TR) |
Series - |
Operating Temperature 125°C (TJ) |
Mounting Type Surface Mount |
Package / Case SC-75, SOT-416 |
Supplier Device Package SC-75 (USM) |
Gain 5dB |
Power - Max 100mW |
Transistor Type NPN |
Current - Collector (Ic) (Max) 60mA |
Voltage - Collector Emitter Breakdown (Max) 12V |
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V |
Frequency - Transition 5GHz |
Noise Figure (dB Typ @ f) - |
Package_case SC-75, SOT-416 |
NE58219-T1-A Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о NE58219-T1-A ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Renesas
NE68518-T1-A
RF TRANS NPN 6V 12GHZ SOT343
NE68118-T1-A
RF TRANS NPN 6V 12GHZ SOT343
NE68018-T1-A
RF TRANS NPN 6V 12GHZ SOT343
NE663M04-T2-A
RF TRANS NPN 6V 12GHZ SOT343
NE97833-T1B-A
RF TRANS NPN 6V 12GHZ SOT343
NE85630-T1-R24-A
RF TRANS NPN 6V 12GHZ SOT343
UPA811T-T1-A
RF TRANS NPN 6V 12GHZ SOT343
NE68133-T1B-R34-A
RF TRANS NPN 6V 12GHZ SOT343
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
UAV flight control system composition, working principle and future development trends
UAV flight control system composition, working principle and future development trends
The core technology of UAVs is concentrated in three aspects: overall technology, power system and flight control technology, which together determine some important technical indicators such as flight altitude, range, flight time, speed, load and so on. In UAVs, the function of the flight control system is to control the attitude and altitude of the UAV, and determine the trajectory and route of the UAV
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i