Renesas NE85630-T1-R24-A
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- NE85630-T1-R24-A
- Renesas
- RF TRANS NPN 12V 4.5GHZ SOT323
- Transistors - Bipolar (BJT) - RF
- NE85630-T1-R24-A Лист данных
- SC-70, SOT-323
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 3440
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number NE85630-T1-R24-A |
| Category Transistors - Bipolar (BJT) - RF |
| Manufacturer Renesas |
| Description RF TRANS NPN 12V 4.5GHZ SOT323 |
| Package Tape & Reel (TR) |
| Series - |
| Operating Temperature 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case SC-70, SOT-323 |
| Supplier Device Package SOT-323 |
| Gain 9dB |
| Power - Max 150mW |
| Transistor Type NPN |
| Current - Collector (Ic) (Max) 100mA |
| Voltage - Collector Emitter Breakdown (Max) 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 7mA, 3V |
| Frequency - Transition 4.5GHz |
| Noise Figure (dB Typ @ f) 1.2dB @ 1GHz |
| Package_case SC-70, SOT-323 |
NE85630-T1-R24-A Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о NE85630-T1-R24-A ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
NE85630-T1-R24-A сопутствующие товары
Комментарии
Renesas
UPA811T-T1-A
RF TRANS 2 NPN 10V 8GHZ SOT363
NE68133-T1B-R34-A
RF TRANS 2 NPN 10V 8GHZ SOT363
NE66219-T1-A
RF TRANS 2 NPN 10V 8GHZ SOT363
NE85634-T1-RE-A
RF TRANS 2 NPN 10V 8GHZ SOT363
NE85639-T1-R27-A
RF TRANS 2 NPN 10V 8GHZ SOT363
CR04AM-12-TB#F00
RF TRANS 2 NPN 10V 8GHZ SOT363
CR04AM-12-ATB#F00
RF TRANS 2 NPN 10V 8GHZ SOT363
HAT1126RWS-E
RF TRANS 2 NPN 10V 8GHZ SOT363
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
UAV flight control system composition, working principle and future development trends
UAV flight control system composition, working principle and future development trends
The core technology of UAVs is concentrated in three aspects: overall technology, power system and flight control technology, which together determine some important technical indicators such as flight altitude, range, flight time, speed, load and so on. In UAVs, the function of the flight control system is to control the attitude and altitude of the UAV, and determine the trajectory and route of the UAV
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
