IXYS MKE38RK600DFEL-TUB
- MKE38RK600DFEL-TUB
- IXYS
- MOSFET N-CH 600V 50A SMPD
- Transistors - FETs, MOSFETs - Single
- MKE38RK600DFEL-TUB Лист данных
- 9-SMD Module
- Tray
- Lead free / RoHS Compliant
- 27027
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number MKE38RK600DFEL-TUB |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 600V 50A SMPD |
Package Tray |
Series CoolMOS™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 9-SMD Module |
Supplier Device Package ISOPLUS-SMPD™.B |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) - |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 50A (Tc) |
Rds On (Max) @ Id, Vgs 45mOhm @ 44A, 10V |
Vgs(th) (Max) @ Id 3.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs 190 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 6800 pF @ 100 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case 9-SMD Module |
MKE38RK600DFEL-TUB Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о MKE38RK600DFEL-TUB ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXTT4N150HV-TRL
MOSFET N-CH 1500V 4A TO268HV
IXTH44N25L2
MOSFET N-CH 1500V 4A TO268HV
IXTF6N200P3
MOSFET N-CH 1500V 4A TO268HV
IXTT1N250HV-TRL
MOSFET N-CH 1500V 4A TO268HV
IXFX400N15X3
MOSFET N-CH 1500V 4A TO268HV
IXFN32N120
MOSFET N-CH 1500V 4A TO268HV
MKE38P600LB-TUB
MOSFET N-CH 1500V 4A TO268HV
IXTT12N150HV-TRL
MOSFET N-CH 1500V 4A TO268HV
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
What is a Junction Diode? What are the types of junction diodes?
What is a Junction Diode? A junction diode is a semiconductor device consisting of a structure composed of a P-type semiconductor and an N-type semiconductor. It is also known as a PN junction diode or simply a diode. Junction diodes are one of the most basic and common types of diodes.