IXTF6N200P3

IXYS IXTF6N200P3

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  • IXTF6N200P3
  • IXYS
  • MOSFET N-CH 2000V 4A I4PAC
  • Transistors - FETs, MOSFETs - Single
  • IXTF6N200P3 Лист данных
  • ISOPLUSi5-Pak™
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTF6N200P3Lead free / RoHS Compliant
  • 1272
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTF6N200P3
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 2000V 4A I4PAC
Package
Tube
Series
Polar™
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
ISOPLUSi5-Pak™
Supplier Device Package
ISOPLUS i4-PAC™
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
215W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
2000 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Rds On (Max) @ Id, Vgs
4.2Ohm @ 3A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3700 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
ISOPLUSi5-Pak™

IXTF6N200P3 Гарантии

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