IXYS IXTF6N200P3
- IXTF6N200P3
- IXYS
- MOSFET N-CH 2000V 4A I4PAC
- Transistors - FETs, MOSFETs - Single
- IXTF6N200P3 Лист данных
- ISOPLUSi5-Pak™
- Tube
- Lead free / RoHS Compliant
- 1272
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXTF6N200P3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 2000V 4A I4PAC |
Package Tube |
Series Polar™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case ISOPLUSi5-Pak™ |
Supplier Device Package ISOPLUS i4-PAC™ |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 215W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 2000 V |
Current - Continuous Drain (Id) @ 25°C 4A (Tc) |
Rds On (Max) @ Id, Vgs 4.2Ohm @ 3A, 10V |
Vgs(th) (Max) @ Id 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 143 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case ISOPLUSi5-Pak™ |
IXTF6N200P3 Гарантии
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• Гарантированное качество
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