MG12450WB-BN2MM

Littelfuse Inc. MG12450WB-BN2MM

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • MG12450WB-BN2MM
  • Littelfuse Inc.
  • IGBT MODULE 1200V 600A 1950W WB
  • Transistors - IGBTs - Modules
  • MG12450WB-BN2MM Лист данных
  • Module
  • Bulk
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/MG12450WB-BN2MMLead free / RoHS Compliant
  • 1974
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
MG12450WB-BN2MM
Category
Transistors - IGBTs - Modules
Manufacturer
Littelfuse Inc.
Description
IGBT MODULE 1200V 600A 1950W WB
Package
Bulk
Series
-
Operating Temperature
-40°C ~ 125°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
WB
Power - Max
1950 W
Configuration
Half Bridge
Current - Collector (Ic) (Max)
600 A
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector Cutoff (Max)
1 mA
IGBT Type
Trench Field Stop
Vce(on) (Max) @ Vge, Ic
1.7V @ 15V, 450A (Typ)
Input Capacitance (Cies) @ Vce
32 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Package_case
Module

MG12450WB-BN2MM Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/MG12450WB-BN2MM

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/MG12450WB-BN2MM

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/MG12450WB-BN2MM

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о MG12450WB-BN2MM ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Littelfuse Inc.
Littelfuse Inc.,https://www.jinftry.ru/product_detail/MG12450WB-BN2MM
MG06200S-BN4MM,https://www.jinftry.ru/product_detail/MG12450WB-BN2MM
MG06200S-BN4MM

IGBT MODULE 600V 200A 600W S3

MG06150S-BN4MM,https://www.jinftry.ru/product_detail/MG12450WB-BN2MM
MG06150S-BN4MM

IGBT MODULE 600V 200A 600W S3

MG12150S-BN2MM,https://www.jinftry.ru/product_detail/MG12450WB-BN2MM
MG12150S-BN2MM

IGBT MODULE 600V 200A 600W S3

MG1750S-BN4MM,https://www.jinftry.ru/product_detail/MG12450WB-BN2MM
MG1750S-BN4MM

IGBT MODULE 600V 200A 600W S3

MG1275S-BA1MM,https://www.jinftry.ru/product_detail/MG12450WB-BN2MM
MG1275S-BA1MM

IGBT MODULE 600V 200A 600W S3

MG1250S-BA1MM,https://www.jinftry.ru/product_detail/MG12450WB-BN2MM
MG1250S-BA1MM

IGBT MODULE 600V 200A 600W S3

MG06400D-BN1MM,https://www.jinftry.ru/product_detail/MG12450WB-BN2MM
MG06400D-BN1MM

IGBT MODULE 600V 200A 600W S3

MG12300D-BN3MM,https://www.jinftry.ru/product_detail/MG12450WB-BN2MM
MG12300D-BN3MM

IGBT MODULE 600V 200A 600W S3

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP