Microsemi Corporation APTGFQ25H120T2G
- APTGFQ25H120T2G
- Microsemi Corporation
- IGBT MODULE 1200V 40A 227W SP2
- Transistors - IGBTs - Modules
- APTGFQ25H120T2G Лист данных
- SP2
- Tray
- Lead free / RoHS Compliant
- 891
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number APTGFQ25H120T2G |
Category Transistors - IGBTs - Modules |
Manufacturer Microsemi Corporation |
Description IGBT MODULE 1200V 40A 227W SP2 |
Package Tray |
Series - |
Operating Temperature - |
Mounting Type Through Hole |
Package / Case SP2 |
Supplier Device Package SP2 |
Power - Max 227 W |
Configuration Full Bridge |
Current - Collector (Ic) (Max) 40 A |
Voltage - Collector Emitter Breakdown (Max) 1200 V |
Current - Collector Cutoff (Max) 250 µA |
IGBT Type NPT and Fieldstop |
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 25A |
Input Capacitance (Cies) @ Vce 2.02 nF @ 25 V |
Input Standard |
NTC Thermistor Yes |
Package_case SP2 |
APTGFQ25H120T2G Гарантии
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