GeneSiC Semiconductor KBPC3510T
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- KBPC3510T
- GeneSiC Semiconductor
- BRIDGE RECT 1P 1KV 35A KBPC-T
- Diodes - Bridge Rectifiers
- KBPC3510T Лист данных
- 4-Square, KBPC-T
- Bulk
-
Lead free / RoHS Compliant - 1837
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number KBPC3510T |
| Category Diodes - Bridge Rectifiers |
| Manufacturer GeneSiC Semiconductor |
| Description BRIDGE RECT 1P 1KV 35A KBPC-T |
| Package Bulk |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type QC Terminal |
| Package / Case 4-Square, KBPC-T |
| Supplier Device Package KBPC-T |
| Technology Standard |
| Diode Type Single Phase |
| Voltage - Peak Reverse (Max) 1 kV |
| Current - Average Rectified (Io) 35 A |
| Voltage - Forward (Vf) (Max) @ If 1.1 V @ 17.5 A |
| Current - Reverse Leakage @ Vr 5 µA @ 1000 V |
| Package_case 4-Square, KBPC-T |
KBPC3510T Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о KBPC3510T ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
KBPC3510T сопутствующие товары
Комментарии
GeneSiC Semiconductor
KBPC3506W
BRIDGE RECT 1P 600V 35A KBPC-W
KBPC3508T
BRIDGE RECT 1P 600V 35A KBPC-W
KBPC3506T
BRIDGE RECT 1P 600V 35A KBPC-W
KBPC3504T
BRIDGE RECT 1P 600V 35A KBPC-W
KBPC3502T
BRIDGE RECT 1P 600V 35A KBPC-W
KBPC3501T
BRIDGE RECT 1P 600V 35A KBPC-W
KBPC35005T
BRIDGE RECT 1P 600V 35A KBPC-W
GBPC15005W
BRIDGE RECT 1P 600V 35A KBPC-W
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives
1N4004 is a silicon rectifier diode, which has the following typical parameter specifications:
It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes,
which are often used in various electronic devices for voltage rectification, such as power converters or power adapters.
1N4002 Diode Features/Technical Specifications (Partial Parameters):
The pin str
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
