Vishay Semiconductor - Diodes Division BU20105S-M3/45
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- BU20105S-M3/45
- Vishay Semiconductor - Diodes Division
- BRIDGE RECT 1P 1KV 20A BU-5S
- Diodes - Bridge Rectifiers
- BU20105S-M3/45 Лист данных
- 4-SIP, BU-5S
- Tube
-
Lead free / RoHS Compliant - 14932
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number BU20105S-M3/45 |
| Category Diodes - Bridge Rectifiers |
| Manufacturer Vishay Semiconductor - Diodes Division |
| Description BRIDGE RECT 1P 1KV 20A BU-5S |
| Package Tube |
| Series - |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case 4-SIP, BU-5S |
| Supplier Device Package isoCINK+™ BU-5S |
| Technology Standard |
| Diode Type Single Phase |
| Voltage - Peak Reverse (Max) 1 kV |
| Current - Average Rectified (Io) 20 A |
| Voltage - Forward (Vf) (Max) @ If 1.05 V @ 10 A |
| Current - Reverse Leakage @ Vr 5 µA @ 1000 V |
| Package_case 4-SIP, BU-5S |
BU20105S-M3/45 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о BU20105S-M3/45 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
BU20105S-M3/45 сопутствующие товары
Комментарии
Vishay Semiconductor - Diodes Division
BU20065S-M3/45
BRIDGE RECT 1P 600V 20A BU-5S
BU25105S-M3/45
BRIDGE RECT 1P 600V 20A BU-5S
BU25085S-M3/45
BRIDGE RECT 1P 600V 20A BU-5S
BU25065S-M3/45
BRIDGE RECT 1P 600V 20A BU-5S
BA679S-M-08
BRIDGE RECT 1P 600V 20A BU-5S
BA679S-M-18
BRIDGE RECT 1P 600V 20A BU-5S
BA679S-GS08
BRIDGE RECT 1P 600V 20A BU-5S
BA679S-GS18
BRIDGE RECT 1P 600V 20A BU-5S
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
The latest 2N3055 transistor datasheet, application, and price analysis in 2023
2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.
The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years
PS22A78-E
Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:
Low-loss, Full Gate CSTBT IGBTs Single Power Supply
Integrated HVICs
Direct Connection to CPUApplications:
