IXYS IXYR50N120C3D1
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXYR50N120C3D1
- IXYS
- IGBT 1200V 56A 290W ISOPLUS247
- Transistors - IGBTs - Single
- IXYR50N120C3D1 Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant - 5391
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXYR50N120C3D1 |
| Category Transistors - IGBTs - Single |
| Manufacturer IXYS |
| Description IGBT 1200V 56A 290W ISOPLUS247 |
| Package Tube |
| Series GenX3™, XPT™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package ISOPLUS247™ |
| Power - Max 290 W |
| Input Type Standard |
| Reverse Recovery Time (trr) 195 ns |
| Current - Collector (Ic) (Max) 56 A |
| Voltage - Collector Emitter Breakdown (Max) 1200 V |
| IGBT Type - |
| Vce(on) (Max) @ Vge, Ic 4V @ 15V, 50A |
| Gate Charge 142 nC |
| Td (on/off) @ 25°C 28ns/133ns |
| Test Condition 600V, 50A, 5Ohm, 15V |
| Current - Collector Pulsed (Icm) 210 A |
| Switching Energy 3mJ (on), 1mJ (off) |
| Package_case TO-247-3 |
IXYR50N120C3D1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXYR50N120C3D1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXYR50N120C3D1 сопутствующие товары
Комментарии
IXYS
IXGH25N160
IGBT 1600V 75A 300W TO247
IXBF9N160G
IGBT 1600V 75A 300W TO247
IXGP8N100
IGBT 1600V 75A 300W TO247
IXGA8N100
IGBT 1600V 75A 300W TO247
IXA20RG1200DHGLB
IGBT 1600V 75A 300W TO247
IXYH12N250C
IGBT 1600V 75A 300W TO247
IXGH16N170AH1
IGBT 1600V 75A 300W TO247
IXGP30N60C3C1
IGBT 1600V 75A 300W TO247
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
