IXYS IXGH16N170AH1
- IXGH16N170AH1
- IXYS
- IGBT 1700V 16A 190W TO247
- Transistors - IGBTs - Single
- IXGH16N170AH1 Лист данных
- TO-247-3
- Bulk
- Lead free / RoHS Compliant
- 1560
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXGH16N170AH1 |
Category Transistors - IGBTs - Single |
Manufacturer IXYS |
Description IGBT 1700V 16A 190W TO247 |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247AD |
Power - Max 190 W |
Input Type Standard |
Reverse Recovery Time (trr) 230 ns |
Current - Collector (Ic) (Max) 16 A |
Voltage - Collector Emitter Breakdown (Max) 1700 V |
IGBT Type NPT |
Vce(on) (Max) @ Vge, Ic 5V @ 15V, 11A |
Gate Charge 65 nC |
Td (on/off) @ 25°C 36ns/160ns |
Test Condition 850V, 16A, 10Ohm, 15V |
Current - Collector Pulsed (Icm) 40 A |
Switching Energy 900µJ (off) |
Package_case TO-247-3 |
IXGH16N170AH1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXGH16N170AH1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXYK140N90C3
IGBT 900V 310A 1630W TO264
IXGH24N170
IGBT 900V 310A 1630W TO264
IXYX140N90C3
IGBT 900V 310A 1630W TO264
IXGT24N170A
IGBT 900V 310A 1630W TO264
IXGR6N170A
IGBT 900V 310A 1630W TO264
IXGK72N60B3H1
IGBT 900V 310A 1630W TO264
IXYX100N120B3
IGBT 900V 310A 1630W TO264
IXGX35N120B
IGBT 900V 310A 1630W TO264
What is a bipolar transistor and what is its operating mode
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications
1N5819 Schottky Diode Description:
1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.
Infineon Ximenkang IGBT FF400R12KT4HOSA1 module series
FF450R12KE4 with EDA/CAD model made by Infineon. FF450R12KE4 provides MODULE package, which is a part of Module, Trans IGBT Module N-CH 1200V 520A 2400000mW 7-Pin 62MM-1 Tray, IGBT Modules N-CH 1.2KV 520A.
The following are the IGBT module series models:
SKM100GAL128D, SKM145GAL128D, SKM200GAL128D, SKM300GAL128D, SKM400GAL128D, SKM145GAR128D
SKM400GAR128D, SKM300GA12V, SKM400GA12V, SKM600GA12V, SKM150GAL12V, SKM400GAL12V, SKM50GB12T4, SKM75GB12T4, SKM100GB12T4, SKM150GB12T4, SKM200GB12T4