IXYS IXTX210P10T
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXTX210P10T
- IXYS
- MOSFET P-CH 100V 210A PLUS247-3
- Transistors - FETs, MOSFETs - Single
- IXTX210P10T Лист данных
- TO-247-3
- Tube
-
Lead free / RoHS Compliant - 4058
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXTX210P10T |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET P-CH 100V 210A PLUS247-3 |
| Package Tube |
| Series TrenchP™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package PLUS247™-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 1040W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 210A (Tc) |
| Rds On (Max) @ Id, Vgs 7.5mOhm @ 105A, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 740 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 69500 pF @ 25 V |
| Vgs (Max) ±15V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
IXTX210P10T Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTX210P10T ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXTX210P10T сопутствующие товары
Комментарии
IXYS
IXKT70N60C5
MOSFET P-CH 600V 68A TO-268
IXFT7N90Q
MOSFET P-CH 600V 68A TO-268
IXFE48N50Q
MOSFET P-CH 600V 68A TO-268
IXFT23N80Q
MOSFET P-CH 600V 68A TO-268
IXFL44N100P
MOSFET P-CH 600V 68A TO-268
IXFK44N55Q
MOSFET P-CH 600V 68A TO-268
IXTH60N10
MOSFET P-CH 600V 68A TO-268
IXFE180N10
MOSFET P-CH 600V 68A TO-268
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
