IXYS IXFT23N80Q
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXFT23N80Q
- IXYS
- MOSFET N-CH 800V 23A TO268
- Transistors - FETs, MOSFETs - Single
- IXFT23N80Q Лист данных
- TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
- Bulk
-
Lead free / RoHS Compliant - 4626
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXFT23N80Q |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 800V 23A TO268 |
| Package Bulk |
| Series HiPerFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
| Supplier Device Package TO-268AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 500W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 800 V |
| Current - Continuous Drain (Id) @ 25°C 23A (Tc) |
| Rds On (Max) @ Id, Vgs 420mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 3mA |
| Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
IXFT23N80Q Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXFT23N80Q ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXFT23N80Q сопутствующие товары
Комментарии
IXYS
IXFL44N100P
MOSFET N-CH 1000V 22A ISOPLUS264
IXFK44N55Q
MOSFET N-CH 1000V 22A ISOPLUS264
IXTH60N10
MOSFET N-CH 1000V 22A ISOPLUS264
IXFE180N10
MOSFET N-CH 1000V 22A ISOPLUS264
IXTR210P10T
MOSFET N-CH 1000V 22A ISOPLUS264
IXTR120P20T
MOSFET N-CH 1000V 22A ISOPLUS264
MKE38RK600DFELB-TRR
MOSFET N-CH 1000V 22A ISOPLUS264
IXFR50N50
MOSFET N-CH 1000V 22A ISOPLUS264
What is diode?
What are diodes and their characteristics in electronics?
Diodes are fundamental components in modern electronics, playing crucial roles in various applications. These tiny yet powerful devices control the flow of electrical current, ensuring the proper functioning of countless electronic circuits. Understanding diodes and their importance is essential for anyone involved in electronics, from hobbyists to professionals.
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
