IXYS IXTP1R6N100D2
- IXTP1R6N100D2
- IXYS
- MOSFET N-CH 1000V 1.6A TO220AB
- Transistors - FETs, MOSFETs - Single
- IXTP1R6N100D2 Лист данных
- TO-220-3
- Bulk
- Lead free / RoHS Compliant
- 1352
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXTP1R6N100D2 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 1000V 1.6A TO220AB |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220-3 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 100W (Tc) |
FET Type N-Channel |
FET Feature Depletion Mode |
Drain to Source Voltage (Vdss) 1000 V |
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc) |
Rds On (Max) @ Id, Vgs 10Ohm @ 800mA, 0V |
Vgs(th) (Max) @ Id - |
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 645 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-220-3 |
IXTP1R6N100D2 Гарантии
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