IXTA120N04T2

IXYS IXTA120N04T2

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXTA120N04T2
  • IXYS
  • MOSFET N-CH 40V 120A TO263
  • Transistors - FETs, MOSFETs - Single
  • IXTA120N04T2 Лист данных
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Jinftry-Reel®
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTA120N04T2Lead free / RoHS Compliant
  • 3063
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTA120N04T2
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 40V 120A TO263
Package
Jinftry-Reel®
Series
TrenchT2™
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
200W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
6.1mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3240 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXTA120N04T2 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXTA120N04T2

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXTA120N04T2

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXTA120N04T2

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXTA120N04T2 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXTA120N04T2
IXFA5N50P3,https://www.jinftry.ru/product_detail/IXTA120N04T2
IXFA5N50P3

MOSFET N-CH 500V 5A TO263

IXTP44N15T,https://www.jinftry.ru/product_detail/IXTA120N04T2
IXTP44N15T

MOSFET N-CH 500V 5A TO263

IXTP32N20T,https://www.jinftry.ru/product_detail/IXTA120N04T2
IXTP32N20T

MOSFET N-CH 500V 5A TO263

IXTP1R4N100P,https://www.jinftry.ru/product_detail/IXTA120N04T2
IXTP1R4N100P

MOSFET N-CH 500V 5A TO263

IXFP8N50PM,https://www.jinftry.ru/product_detail/IXTA120N04T2
IXFP8N50PM

MOSFET N-CH 500V 5A TO263

IXTY1R4N100P,https://www.jinftry.ru/product_detail/IXTA120N04T2
IXTY1R4N100P

MOSFET N-CH 500V 5A TO263

IXFP7N60P3,https://www.jinftry.ru/product_detail/IXTA120N04T2
IXFP7N60P3

MOSFET N-CH 500V 5A TO263

IXTA32N20T,https://www.jinftry.ru/product_detail/IXTA120N04T2
IXTA32N20T

MOSFET N-CH 500V 5A TO263

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet

1N5408 Power/Rectifier Diode Introduction - Pinout, Price, Datasheet An introduction to the 1N5408 power/rectifier diode is discussed here. 1N5408 is a very common rectifier diode that is widely used in electronic equipment. This is a general purpose silicon diode, the 1N5408 low frequency power diode, used in various rectification and power conversion applications.

1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications

1N5819 Schottky Diode Description: 1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001? "1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes. 1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP