IXYS IXTN32P60P
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXTN32P60P
- IXYS
- MOSFET P-CH 600V 32A SOT227B
- Transistors - FETs, MOSFETs - Single
- IXTN32P60P Лист данных
- SOT-227-4, miniBLOC
- Tube
-
Lead free / RoHS Compliant - 6033
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXTN32P60P |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET P-CH 600V 32A SOT227B |
| Package Tube |
| Series PolarP™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Chassis Mount |
| Package / Case SOT-227-4, miniBLOC |
| Supplier Device Package SOT-227B |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 890W (Tc) |
| FET Type P-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 32A (Tc) |
| Rds On (Max) @ Id, Vgs 350mOhm @ 500mA, 10V |
| Vgs(th) (Max) @ Id 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 196 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 11100 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case SOT-227-4, miniBLOC |
IXTN32P60P Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTN32P60P ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXTN32P60P сопутствующие товары
Комментарии
IXYS
IXFN280N07
MOSFET N-CH 70V 280A SOT-227B
IXFN240N15T2
MOSFET N-CH 70V 280A SOT-227B
IXFN140N25T
MOSFET N-CH 70V 280A SOT-227B
IXFX32N100Q3
MOSFET N-CH 70V 280A SOT-227B
IXFN100N25
MOSFET N-CH 70V 280A SOT-227B
IXFN180N07
MOSFET N-CH 70V 280A SOT-227B
MMIX1F210N30P3
MOSFET N-CH 70V 280A SOT-227B
IXFK60N55Q2
MOSFET N-CH 70V 280A SOT-227B
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.
