IXYS IXFR26N100P
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- IXFR26N100P
- IXYS
- MOSFET N-CH 1000V 15A ISOPLUS247
- Transistors - FETs, MOSFETs - Single
- IXFR26N100P Лист данных
- TO-247-3
- Bulk
-
Lead free / RoHS Compliant - 27975
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IXFR26N100P |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 1000V 15A ISOPLUS247 |
| Package Bulk |
| Series HiPerFET™, PolarP2™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-247-3 |
| Supplier Device Package ISOPLUS247™ |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 290W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 1000 V |
| Current - Continuous Drain (Id) @ 25°C 15A (Tc) |
| Rds On (Max) @ Id, Vgs 430mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id 6.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs 197 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 11900 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-247-3 |
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Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
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Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
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