IXYS IXTH200N10T
- IXTH200N10T
- IXYS
- MOSFET N-CH 100V 200A TO247
- Transistors - FETs, MOSFETs - Single
- IXTH200N10T Лист данных
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 10144
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXTH200N10T |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 100V 200A TO247 |
Package Tube |
Series TrenchMV™ |
Operating Temperature -55°C ~ 175°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247 (IXTH) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 550W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 200A (Tc) |
Rds On (Max) @ Id, Vgs 5.5mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 152 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 9400 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
IXTH200N10T Гарантии
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