IXYS IXTF280N055T
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXTF280N055T
- IXYS
- MOSFET N-CH 55V 160A I4PAC
- Transistors - FETs, MOSFETs - Single
- IXTF280N055T Лист данных
- i4-Pac™-5
- Tube
-
Lead free / RoHS Compliant - 15526
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXTF280N055T |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 55V 160A I4PAC |
| Package Tube |
| Series TrenchMV™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case i4-Pac™-5 |
| Supplier Device Package ISOPLUS i4-PAC™ |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 200W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 55 V |
| Current - Continuous Drain (Id) @ 25°C 160A (Tc) |
| Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 9800 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case i4-Pac™-5 |
IXTF280N055T Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTF280N055T ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXTF280N055T сопутствующие товары
Комментарии
IXYS
IXTF230N085T
MOSFET N-CH 85V 130A I4PAC
IXTC280N055T
MOSFET N-CH 85V 130A I4PAC
IXTC250N075T
MOSFET N-CH 85V 130A I4PAC
IXTC240N055T
MOSFET N-CH 85V 130A I4PAC
IXTC230N085T
MOSFET N-CH 85V 130A I4PAC
IXTC220N075T
MOSFET N-CH 85V 130A I4PAC
IXTC220N055T
MOSFET N-CH 85V 130A I4PAC
IXTC200N10T
MOSFET N-CH 85V 130A I4PAC
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
