IXYS IXTF250N075T
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IXTF250N075T
- IXYS
- MOSFET N-CH 75V 140A I4PAC
- Transistors - FETs, MOSFETs - Single
- IXTF250N075T Лист данных
- i4-Pac™-5
- Tube
-
Lead free / RoHS Compliant - 2303
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IXTF250N075T |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 75V 140A I4PAC |
| Package Tube |
| Series TrenchMV™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case i4-Pac™-5 |
| Supplier Device Package ISOPLUS i4-PAC™ |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 200W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 75 V |
| Current - Continuous Drain (Id) @ 25°C 140A (Tc) |
| Rds On (Max) @ Id, Vgs 4.4mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 9900 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case i4-Pac™-5 |
IXTF250N075T Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTF250N075T ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IXTF250N075T сопутствующие товары
Комментарии
IXYS
IXTC280N055T
MOSFET N-CH 55V 145A ISOPLUS220
IXTC250N075T
MOSFET N-CH 55V 145A ISOPLUS220
IXTC240N055T
MOSFET N-CH 55V 145A ISOPLUS220
IXTC230N085T
MOSFET N-CH 55V 145A ISOPLUS220
IXTC220N075T
MOSFET N-CH 55V 145A ISOPLUS220
IXTC220N055T
MOSFET N-CH 55V 145A ISOPLUS220
IXTC200N10T
MOSFET N-CH 55V 145A ISOPLUS220
IXTC180N10T
MOSFET N-CH 55V 145A ISOPLUS220
BC547/BC548 transistor pin configuration, data sheet and application characteristics
BC547/BC548 transistor pin configuration, data sheet and application characteristics
What is a BC547 transistor?
BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
