IXYS IXTA6N100D2-TRL
- IXTA6N100D2-TRL
- IXYS
- MOSFET N-CH 1000V 6A TO263
- Transistors - FETs, MOSFETs - Single
- IXTA6N100D2-TRL Лист данных
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Tape & Reel (TR)
- Lead free / RoHS Compliant
- 2323
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXTA6N100D2-TRL |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 1000V 6A TO263 |
Package Tape & Reel (TR) |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package TO-263 (D2Pak) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 300W (Tc) |
FET Type N-Channel |
FET Feature Depletion Mode |
Drain to Source Voltage (Vdss) 1000 V |
Current - Continuous Drain (Id) @ 25°C 6A (Tj) |
Rds On (Max) @ Id, Vgs 2.2Ohm @ 3A, 0V |
Vgs(th) (Max) @ Id 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 0V |
Package_case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
IXTA6N100D2-TRL Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXTA6N100D2-TRL ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXTA3N120-TRR
MOSFET N-CH 1200V 3A TO263
IXFH46N30T
MOSFET N-CH 1200V 3A TO263
IXFA20N85XHV-TRL
MOSFET N-CH 1200V 3A TO263
IXFP44N25X3
MOSFET N-CH 1200V 3A TO263
IXTA24N65X2
MOSFET N-CH 1200V 3A TO263
IXFP14N55X2
MOSFET N-CH 1200V 3A TO263
IXFP14N55X2M
MOSFET N-CH 1200V 3A TO263
IXTA32P20T-TRL
MOSFET N-CH 1200V 3A TO263
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
BC547/BC548 transistor pin configuration, data sheet and application characteristics
BC547/BC548 transistor pin configuration, data sheet and application characteristics
What is a BC547 transistor?
BC547 is a common NPN bipolar transistor, so it is widely used in electronic circuits when the base pin is connected to ground, the collector and emitter will remain open circuit (reverse biased), while when the base pin is grounded When a signal is provided, the collector and emitter are turned off (forward biased).
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences: