IXFH46N30T

IXYS IXFH46N30T

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXFH46N30T
  • IXYS
  • MOSFET N-CH 300V 46A TO247
  • Transistors - FETs, MOSFETs - Single
  • IXFH46N30T Лист данных
  • TO-247-3
  • Tape & Reel (TR)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXFH46N30TLead free / RoHS Compliant
  • 29021
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXFH46N30T
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 300V 46A TO247
Package
Tape & Reel (TR)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3
Supplier Device Package
TO-247 (IXTH)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
460W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25°C
46A (Tc)
Rds On (Max) @ Id, Vgs
80mOhm @ 23A, 10V
Vgs(th) (Max) @ Id
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4770 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-247-3

IXFH46N30T Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXFH46N30T

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXFH46N30T

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXFH46N30T

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXFH46N30T ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXFH46N30T
IXFA20N85XHV-TRL,https://www.jinftry.ru/product_detail/IXFH46N30T
IXFA20N85XHV-TRL

MOSFET N-CH 850V 20A TO263HV

IXFP44N25X3,https://www.jinftry.ru/product_detail/IXFH46N30T
IXFP44N25X3

MOSFET N-CH 850V 20A TO263HV

IXTA24N65X2,https://www.jinftry.ru/product_detail/IXFH46N30T
IXTA24N65X2

MOSFET N-CH 850V 20A TO263HV

IXFP14N55X2,https://www.jinftry.ru/product_detail/IXFH46N30T
IXFP14N55X2

MOSFET N-CH 850V 20A TO263HV

IXFP14N55X2M,https://www.jinftry.ru/product_detail/IXFH46N30T
IXFP14N55X2M

MOSFET N-CH 850V 20A TO263HV

IXTA32P20T-TRL,https://www.jinftry.ru/product_detail/IXFH46N30T
IXTA32P20T-TRL

MOSFET N-CH 850V 20A TO263HV

IXTA20N65X-TRL,https://www.jinftry.ru/product_detail/IXFH46N30T
IXTA20N65X-TRL

MOSFET N-CH 850V 20A TO263HV

IXFP50N20X3,https://www.jinftry.ru/product_detail/IXFH46N30T
IXFP50N20X3

MOSFET N-CH 850V 20A TO263HV

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP