IXTA1R4N100PTRL

IXYS IXTA1R4N100PTRL

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXTA1R4N100PTRL
  • IXYS
  • MOSFET N-CH 1000V 1.4A TO263
  • Transistors - FETs, MOSFETs - Single
  • IXTA1R4N100PTRL Лист данных
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Cut Tape (CT)
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRLLead free / RoHS Compliant
  • 22993
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTA1R4N100PTRL
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1000V 1.4A TO263
Package
Cut Tape (CT)
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263 (D2Pak)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
63W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Tc)
Rds On (Max) @ Id, Vgs
11.8Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
450 pF @ 25 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXTA1R4N100PTRL Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRL

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRL

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRL

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXTA1R4N100PTRL ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRL
IXTY1R4N120PHV,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRL
IXTY1R4N120PHV

MOSFET N-CH 1200V 1.4A TO252

IXTY48P05T-TRL,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRL
IXTY48P05T-TRL

MOSFET N-CH 1200V 1.4A TO252

IXTY26P10T-TRL,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRL
IXTY26P10T-TRL

MOSFET N-CH 1200V 1.4A TO252

IXTY1R4N120P-TRL,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRL
IXTY1R4N120P-TRL

MOSFET N-CH 1200V 1.4A TO252

IXTA1R6N100D2-TRL,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRL
IXTA1R6N100D2-TRL

MOSFET N-CH 1200V 1.4A TO252

IXTA90N075T2-TRL,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRL
IXTA90N075T2-TRL

MOSFET N-CH 1200V 1.4A TO252

IXFP8N85XM,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRL
IXFP8N85XM

MOSFET N-CH 1200V 1.4A TO252

IXTA42N15T,https://www.jinftry.ru/product_detail/IXTA1R4N100PTRL
IXTA42N15T

MOSFET N-CH 1200V 1.4A TO252

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications

An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications. IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements

NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP