IXTY1R4N120P-TRL

IXYS IXTY1R4N120P-TRL

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXTY1R4N120P-TRL
  • IXYS
  • MOSFET N-CH 1200V 1.4A TO252
  • Transistors - FETs, MOSFETs - Single
  • IXTY1R4N120P-TRL Лист данных
  • TO-252-3, DPak (2 Leads + Tab), SC-63
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRLLead free / RoHS Compliant
  • 18166
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTY1R4N120P-TRL
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1200V 1.4A TO252
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
86W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Tc)
Rds On (Max) @ Id, Vgs
13Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
666 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-252-3, DPak (2 Leads + Tab), SC-63

IXTY1R4N120P-TRL Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRL

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRL

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRL

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXTY1R4N120P-TRL ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRL
IXTA1R6N100D2-TRL,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRL
IXTA1R6N100D2-TRL

MOSFET N-CH 1000V 1.6A TO263

IXTA90N075T2-TRL,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRL
IXTA90N075T2-TRL

MOSFET N-CH 1000V 1.6A TO263

IXFP8N85XM,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRL
IXFP8N85XM

MOSFET N-CH 1000V 1.6A TO263

IXTA42N15T,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRL
IXTA42N15T

MOSFET N-CH 1000V 1.6A TO263

IXTA2N100P-TRL,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRL
IXTA2N100P-TRL

MOSFET N-CH 1000V 1.6A TO263

IXTA08N100D2HV-TRL,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRL
IXTA08N100D2HV-TRL

MOSFET N-CH 1000V 1.6A TO263

IXTA80N10T-TRL,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRL
IXTA80N10T-TRL

MOSFET N-CH 1000V 1.6A TO263

IXFP8N65X2,https://www.jinftry.ru/product_detail/IXTY1R4N120P-TRL
IXFP8N65X2

MOSFET N-CH 1000V 1.6A TO263

What is a power module

What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),

Introduction to Semiconductor Discrete Devices

Introduction to Semiconductor Discrete Devices Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices. Introduction to Semiconductor Discrete Devices Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe

What is a bipolar transistor and what is its operating mode

What is a bipolar transistor How bipolar transistors work Bipolar junction transistor four modes of operation Bipolar transistor development applications What is a bipolar transistor

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP