IXYS IXSX50N60BD1
- IXSX50N60BD1
- IXYS
- IGBT 600V 75A 300W PLUS247
- Transistors - IGBTs - Single
- IXSX50N60BD1 Лист данных
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 12737
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXSX50N60BD1 |
Category Transistors - IGBTs - Single |
Manufacturer IXYS |
Description IGBT 600V 75A 300W PLUS247 |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package PLUS247™-3 |
Power - Max 300 W |
Input Type Standard |
Reverse Recovery Time (trr) 35 ns |
Current - Collector (Ic) (Max) 75 A |
Voltage - Collector Emitter Breakdown (Max) 600 V |
IGBT Type - |
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 50A |
Gate Charge 167 nC |
Td (on/off) @ 25°C 70ns/150ns |
Test Condition 480V, 50A, 2.7Ohm, 15V |
Current - Collector Pulsed (Icm) 200 A |
Switching Energy 3.3mJ (off) |
Package_case TO-247-3 |
IXSX50N60BD1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXSX50N60BD1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXSR50N60BU1
IGBT 600V ISOPLUS247
IXSR50N60B
IGBT 600V ISOPLUS247
IXSP24N60B
IGBT 600V ISOPLUS247
IXSK50N60BU1
IGBT 600V ISOPLUS247
IXSK50N60BD1
IGBT 600V ISOPLUS247
IXSK30N60BD1
IGBT 600V ISOPLUS247
IXSH35N120A
IGBT 600V ISOPLUS247
IXSH30N60U1
IGBT 600V ISOPLUS247
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
An introduction to the IGBT module CM1000DU-34NF from Powerex Inc. and its technical applications
IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the advantages of MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and BJT (Bipolar Transistor). It is widely used in the field of power electronics and used in switching power supplies. , motor drive, inverter and other applications.
IGBT module CM1000DU-34NF The IGBT module is a highly efficient and comp
2SC5200 2SA1943 NPN transistor electronic power amplifier, data sheet, application characteristics
The 2SA1943 and 2SC5200 are complementary NPN and PNP power transistors commonly used in electronic power amplifier circuits. When used together, they are often used in high-power audio amplifiers to amplify audio signals.
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic