IXYS IXSP24N60B
- IXSP24N60B
- IXYS
- IGBT 600V 48A 150W TO220AB
- Transistors - IGBTs - Single
- IXSP24N60B Лист данных
- TO-220-3
- Tube
- Lead free / RoHS Compliant
- 2502
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXSP24N60B |
Category Transistors - IGBTs - Single |
Manufacturer IXYS |
Description IGBT 600V 48A 150W TO220AB |
Package Tube |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-220-3 |
Supplier Device Package TO-220-3 |
Power - Max 150 W |
Input Type Standard |
Reverse Recovery Time (trr) - |
Current - Collector (Ic) (Max) 48 A |
Voltage - Collector Emitter Breakdown (Max) 600 V |
IGBT Type PT |
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 24A |
Gate Charge 41 nC |
Td (on/off) @ 25°C 50ns/150ns |
Test Condition 480V, 24A, 33Ohm, 15V |
Current - Collector Pulsed (Icm) 96 A |
Switching Energy 1.3mJ (off) |
Package_case TO-220-3 |
IXSP24N60B Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXSP24N60B ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXSK50N60BD1
IGBT 600V 75A 300W TO264
IXSK30N60BD1
IGBT 600V 75A 300W TO264
IXSH35N120A
IGBT 600V 75A 300W TO264
IXSH30N60U1
IGBT 600V 75A 300W TO264
IXSH30N60AU1
IGBT 600V 75A 300W TO264
IXSH25N120AU1
IGBT 600V 75A 300W TO264
IXSH24N60U1
IGBT 600V 75A 300W TO264
IXSH24N60BD1
IGBT 600V 75A 300W TO264
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The most complete introduction to IGBT modules in 2023
IGBTs are used in many applications, such as motor drives, industrial control, power transmission, renewable energy, and electric transportation, mainly because IGBTs provide a convenient and reliable power-switching solution for handling high-power and high-voltage applications.
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
Model BC547/2N2222/2N4401 can replace 2N3904 transistor
2N3904 is a commonly used NPN bipolar transistor
(2N3904 transistor), which is widely used in electronics due to its wide range of properties. The following are the specific model specifications of each manufacturer of the 2N3904 series: 2N3904, 2N3904 PBFREE, 2N3904,116, 2N3904,412, 2N3904-AP, 2N3904-BP,, 2N3904BU, 2N3904CBU, 2N3904G, 2N3904NLBU, 2N3904RL 1.. etc.
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.