IXYS IXFN82N60Q3
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- IXFN82N60Q3
- IXYS
- MOSFET N-CH 600V 66A SOT227B
- Transistors - FETs, MOSFETs - Single
- IXFN82N60Q3 Лист данных
- SOT-227-4, miniBLOC
- Tube
-
Lead free / RoHS Compliant - 28950
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IXFN82N60Q3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer IXYS |
| Description MOSFET N-CH 600V 66A SOT227B |
| Package Tube |
| Series HiPerFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Chassis Mount |
| Package / Case SOT-227-4, miniBLOC |
| Supplier Device Package SOT-227B |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 960W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 600 V |
| Current - Continuous Drain (Id) @ 25°C 66A (Tc) |
| Rds On (Max) @ Id, Vgs 75mOhm @ 41A, 10V |
| Vgs(th) (Max) @ Id 6.5V @ 8mA |
| Gate Charge (Qg) (Max) @ Vgs 275 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 13500 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case SOT-227-4, miniBLOC |
IXFN82N60Q3 Гарантии
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