IXTA05N100

IXYS IXTA05N100

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IXTA05N100
  • IXYS
  • MOSFET N-CH 1000V 750MA TO263
  • Transistors - FETs, MOSFETs - Single
  • IXTA05N100 Лист данных
  • TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Tube
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IXTA05N100Lead free / RoHS Compliant
  • 4680
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IXTA05N100
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
IXYS
Description
MOSFET N-CH 1000V 750MA TO263
Package
Tube
Series
-
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263AA
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
40W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
750mA (Tc)
Rds On (Max) @ Id, Vgs
17Ohm @ 375mA, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
260 pF @ 25 V
Vgs (Max)
±30V
Drive Voltage (Max Rds On, Min Rds On)
10V
Package_case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXTA05N100 Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IXTA05N100

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IXTA05N100

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IXTA05N100

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IXTA05N100 ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

IXYS
IXYS,https://www.jinftry.ru/product_detail/IXTA05N100
IXTP32N65XM,https://www.jinftry.ru/product_detail/IXTA05N100
IXTP32N65XM

MOSFET N-CH 650V 14A TO220-3

IXTP32N65X,https://www.jinftry.ru/product_detail/IXTA05N100
IXTP32N65X

MOSFET N-CH 650V 14A TO220-3

IXTY02N50D,https://www.jinftry.ru/product_detail/IXTA05N100
IXTY02N50D

MOSFET N-CH 650V 14A TO220-3

IXTA3N120TRL,https://www.jinftry.ru/product_detail/IXTA05N100
IXTA3N120TRL

MOSFET N-CH 650V 14A TO220-3

IXTA10P50PTRL,https://www.jinftry.ru/product_detail/IXTA05N100
IXTA10P50PTRL

MOSFET N-CH 650V 14A TO220-3

IXTT140N10P,https://www.jinftry.ru/product_detail/IXTA05N100
IXTT140N10P

MOSFET N-CH 650V 14A TO220-3

IXTH20N65X,https://www.jinftry.ru/product_detail/IXTA05N100
IXTH20N65X

MOSFET N-CH 650V 14A TO220-3

IXTA20N65X,https://www.jinftry.ru/product_detail/IXTA05N100
IXTA20N65X

MOSFET N-CH 650V 14A TO220-3

What is a bipolar transistor and what is its operating mode

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.

SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems. Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i

1n5819 Diode (Schottky Rectifier) Pinout, Alternatives, Specifications, Datasheet, Price and Applications

1N5819 Schottky Diode Description: 1N5819 is a commonly used Schottky diode. A Schottky diode is a diode with special properties, its main features are a small forward voltage drop (typically 0.2-0.3V) and a fast reverse recovery time.

The development trend of IGBT (insulated gate bipolar transistor) manufacturers in recent years

PS22A78-E Description:DIPIPMs are intelligent power modules that integrate power devices, drivers, and protection circuitry. Design time is reduced by the use of application-specific HVICs and value-added features such as linear temperature feed-back. Overall efficiency and reliability are increase ed by the use of full gate CSTBT technology and low thermal impedance. Features:   Low-loss, Full Gate CSTBT IGBTs Single Power Supply   Integrated HVICs   Direct Connection to CPUApplications:
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP