IXYS IXFH24N50
- IXFH24N50
- IXYS
- MOSFET N-CH 500V 24A TO247AD
- Transistors - FETs, MOSFETs - Single
- IXFH24N50 Лист данных
- TO-247-3
- Tube
- Lead free / RoHS Compliant
- 10550
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXFH24N50 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 500V 24A TO247AD |
Package Tube |
Series HiPerFET™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-247-3 |
Supplier Device Package TO-247AD (IXFH) |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 300W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 500 V |
Current - Continuous Drain (Id) @ 25°C 24A (Tc) |
Rds On (Max) @ Id, Vgs 230mOhm @ 12A, 10V |
Vgs(th) (Max) @ Id 4V @ 4mA |
Gate Charge (Qg) (Max) @ Vgs 160 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 4200 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-247-3 |
IXFH24N50 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXFH24N50 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXTH24P20
MOSFET P-CH 200V 24A TO247
IXTH76P10T
MOSFET P-CH 200V 24A TO247
IXFN44N80
MOSFET P-CH 200V 24A TO247
IXFL38N100Q2
MOSFET P-CH 200V 24A TO247
IXFN180N20
MOSFET P-CH 200V 24A TO247
IXFN70N60Q2
MOSFET P-CH 200V 24A TO247
IXFN38N100P
MOSFET P-CH 200V 24A TO247
IXTY1R4N60P
MOSFET P-CH 200V 24A TO247
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
Datasheet and working principle of 1N4001 rectifier diode
Friends who are familiar with diodes should know that 1N4001 is a common rectifier diode used to convert alternating current into direct current. This type of diode has a wide range of applications in electronic equipment and circuits.
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
1N4148 diode, characteristics - can use 1n4148w, 1n4448 diode instead
The 1N4148 diode is a common fast-switching diode used in a variety of electronic devices.
Picture 01
Basic parameters of 1N4148 diode:
Maximum reverse voltage: 100V
Maximum forward current: 200mA
Peak Forward Current: 450mA
Forward Voltage (at 1.0mA): 1V
Reverse current (at 75V): 5nA
Maximum working temperature: 150°C
Maximum storage temperature: 175°C
Switching time: 4ns
1N4148 diodes are common in applic