IXYS IXFN70N60Q2
- IXFN70N60Q2
- IXYS
- MOSFET N-CH 600V 70A SOT-227B
- Transistors - FETs, MOSFETs - Single
- IXFN70N60Q2 Лист данных
- SOT-227-4, miniBLOC
- Tube
- Lead free / RoHS Compliant
- 22994
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IXFN70N60Q2 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer IXYS |
Description MOSFET N-CH 600V 70A SOT-227B |
Package Tube |
Series HiPerFET™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Chassis Mount |
Package / Case SOT-227-4, miniBLOC |
Supplier Device Package SOT-227B |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 890W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 600 V |
Current - Continuous Drain (Id) @ 25°C 70A (Tc) |
Rds On (Max) @ Id, Vgs 80mOhm @ 35A, 10V |
Vgs(th) (Max) @ Id 5V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs 265 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 7200 pF @ 25 V |
Vgs (Max) ±30V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case SOT-227-4, miniBLOC |
IXFN70N60Q2 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IXFN70N60Q2 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
IXYS
IXTY1R4N60P
MOSFET N-CH 600V 1.4A TO252
IXTP44N10T
MOSFET N-CH 600V 1.4A TO252
IXTU12N06T
MOSFET N-CH 600V 1.4A TO252
IXTA60N10T
MOSFET N-CH 600V 1.4A TO252
IXTP70N075T2
MOSFET N-CH 600V 1.4A TO252
IXTA08N100D2
MOSFET N-CH 600V 1.4A TO252
IXTP24P085T
MOSFET N-CH 600V 1.4A TO252
IXTA08N50D2
MOSFET N-CH 600V 1.4A TO252
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
What are IGBTs? How to improve the thermal performance design of IGBT on PCB
IGBT - Insulated Gate Bipolar Transistor. An IGBT is a power semiconductor device used in high voltage and high current applications. They are mainly used as switches in power electronic circuits. It's worth noting in the name IGBT, which has an insulated gate like a FET and a bipolar transistor like a BJT. The main reason for this is that an IGBT is indeed a device that combines the advantages of both transistors
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.