International Rectifier IRLH6224TRPBF
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IRLH6224TRPBF
- International Rectifier
- MOSFET N-CH 20V 28A/105A 8PQFN
- Transistors - FETs, MOSFETs - Single
- IRLH6224TRPBF Лист данных
- 8-PowerTDFN
- Tape & Reel (TR)
-
Lead free / RoHS Compliant - 1561
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IRLH6224TRPBF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer International Rectifier |
| Description MOSFET N-CH 20V 28A/105A 8PQFN |
| Package Tape & Reel (TR) |
| Series HEXFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerTDFN |
| Supplier Device Package 8-PQFN (5x6) |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.6W (Ta), 52W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 20 V |
| Current - Continuous Drain (Id) @ 25°C 28A (Ta), 105A (Tc) |
| Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 4.5V |
| Vgs(th) (Max) @ Id 1.1V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 3.71 pF @ 10 V |
| Vgs (Max) ±12V |
| Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V |
| Package_case 8-PowerTDFN |
IRLH6224TRPBF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IRLH6224TRPBF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IRLH6224TRPBF сопутствующие товары
Комментарии
International Rectifier
IRFS4615TRLPBF
IRFS4615 - 12V-300V N-CHANNEL PO
IRF6662TRPBF
IRFS4615 - 12V-300V N-CHANNEL PO
IRFS7734TRL7PP
IRFS4615 - 12V-300V N-CHANNEL PO
IRFH5007TRPBF
IRFS4615 - 12V-300V N-CHANNEL PO
IRL7472L1TRPBF
IRFS4615 - 12V-300V N-CHANNEL PO
IRF7749L1TRPBF
IRFS4615 - 12V-300V N-CHANNEL PO
AUIRF4905STRL
IRFS4615 - 12V-300V N-CHANNEL PO
AUIRF7749L2TR
IRFS4615 - 12V-300V N-CHANNEL PO
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
