Infineon Technologies IPD12CN10NGATMA1
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IPD12CN10NGATMA1
- Infineon Technologies
- MOSFET N-CH 100V 67A TO252-3
- Transistors - FETs, MOSFETs - Single
- IPD12CN10NGATMA1 Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 28413
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IPD12CN10NGATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 100V 67A TO252-3 |
| Package Cut Tape (CT) |
| Series OptiMOS™ |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package PG-TO252-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 125W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 100 V |
| Current - Continuous Drain (Id) @ 25°C 67A (Tc) |
| Rds On (Max) @ Id, Vgs 12.4mOhm @ 67A, 10V |
| Vgs(th) (Max) @ Id 4V @ 83µA |
| Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4320 pF @ 50 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD12CN10NGATMA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IPD12CN10NGATMA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IPD12CN10NGATMA1 сопутствующие товары
Комментарии
Infineon Technologies
SPB100N03S203T
MOSFET N-CH 30V 100A TO263-3
IRF6678
MOSFET N-CH 30V 100A TO263-3
IRL7833STRLPBF
MOSFET N-CH 30V 100A TO263-3
BSC360N15NS3GATMA1
MOSFET N-CH 30V 100A TO263-3
IPD038N06N3GATMA1
MOSFET N-CH 30V 100A TO263-3
BSC034N06NSATMA1
MOSFET N-CH 30V 100A TO263-3
IRF3710ZSTRLPBF
MOSFET N-CH 30V 100A TO263-3
IPB60R380P6ATMA1
MOSFET N-CH 30V 100A TO263-3
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?
"1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes.
1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.
Infineon Technologies BGT60ATR24C XENSIV 60GHz Automotive Radar MMIC
Infineon Technologies BGT60ATR24C XENSIV 60GHz Automotive Radar MMIC
Infineon BGT60ATR24C XENSIV ™ The automotive 60GHz radar sensor realizes ultra wideband frequency modulated continuous wave (FMCW) operation, and adopts small package. BGT60ATR24C is designed for on-board occupancy detection (scanning the cabin to scan people and pets). The sensor configuration and data acquisition are realized through the digital interface. The integrated state machine supports independent data acquisition, h
Infineon Technologies-Gate driver reinforced isolation
HV driver with 6kV isolation in a SO-8W package
Flip chip package increases power density
200V half-bridge driver in SOIC-8 package
Fluence and Northvolt to co-develop battery technology for
Grid-scale energy storage
Global consortium for power system operators and research institutes
Addionics, Saint-Gobain Ceramics team on solid state battery tech
Lead perovskite boosts solar cell efficiency over 25 percent
200kW SiC inverter hits 99 percent efficiency
