Vishay Siliconix IRFR210PBF-BE3
- IRFR210PBF-BE3
- Vishay Siliconix
- MOSFET N-CH 200V 2.6A DPAK
- Transistors - FETs, MOSFETs - Single
- IRFR210PBF-BE3 Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Bulk
- Lead free / RoHS Compliant
- 3853
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IRFR210PBF-BE3 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Vishay Siliconix |
Description MOSFET N-CH 200V 2.6A DPAK |
Package Bulk |
Series - |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package TO-252AA |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta), 25W (Tc) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 200 V |
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc) |
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 8.2 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) - |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
IRFR210PBF-BE3 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IRFR210PBF-BE3 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Vishay Siliconix
IRFR120PBF-BE3
MOSFET N-CH 100V 7.7A DPAK
SIHU5N80AE-GE3
MOSFET N-CH 100V 7.7A DPAK
SIDR104ADP-T1-RE3
MOSFET N-CH 100V 7.7A DPAK
SIDR170DP-T1-RE3
MOSFET N-CH 100V 7.7A DPAK
SIHA5N80AE-GE3
MOSFET N-CH 100V 7.7A DPAK
SIHU6N80AE-GE3
MOSFET N-CH 100V 7.7A DPAK
IRFR214PBF-BE3
MOSFET N-CH 100V 7.7A DPAK
IRFR010PBF-BE3
MOSFET N-CH 100V 7.7A DPAK
What is diode?
What are diodes and their characteristics in electronics?
Diodes are fundamental components in modern electronics, playing crucial roles in various applications. These tiny yet powerful devices control the flow of electrical current, ensuring the proper functioning of countless electronic circuits. Understanding diodes and their importance is essential for anyone involved in electronics, from hobbyists to professionals.
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
NPN Silicon Transistor S8050 - Datasheet, Application Specifications, Pinout and Equivalent Replacements
S8050 is an NPN bipolar transistor. So when the base pin is connected to ground, the collector and emitter will remain open (reverse biased) and when a signal is supplied to the base pin, the collector and emitter will be closed (forward biased). It is commonly used in amplification and switching applications and is the perfect transistor to perform small and versatile tasks in electronic
Classification of IGBT modules, difference between application characteristics and MOSFETs
Classification of IGBT modules, difference between application characteristics and MOSFETs
Both MOSFETs (Metal Oxide Semiconductor Field Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors) are commonly used switching devices in power electronics. They each have their own characteristics and application scenarios, the following are their main differences:
ON NTD2955G series packages and features are different
NTD2955 is a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor) produced by ON Semiconductor. NTD2955 series models may have some changes, such as NTD2955PT4G, NTD2955T4G, NTD2955T4, NTD2955G, NTD2955-1G, etc. These models basically have the same parameters, but may differ in packaging or other characteristics.