Vishay Siliconix SIHU6N80AE-GE3
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- SIHU6N80AE-GE3
- Vishay Siliconix
- MOSFET N-CH 800V 5A TO251AA
- Transistors - FETs, MOSFETs - Single
- SIHU6N80AE-GE3 Лист данных
- TO-251-3 Short Leads, IPak, TO-251AA
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 779
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number SIHU6N80AE-GE3 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Vishay Siliconix |
| Description MOSFET N-CH 800V 5A TO251AA |
| Package Cut Tape (CT) |
| Series E |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package TO-251AA |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 62.5W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 800 V |
| Current - Continuous Drain (Id) @ 25°C 5A (Tc) |
| Rds On (Max) @ Id, Vgs 950mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 22.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 422 pF @ 100 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-251-3 Short Leads, IPak, TO-251AA |
SIHU6N80AE-GE3 Гарантии
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