IRFH8318TRPBF

Infineon Technologies IRFH8318TRPBF

Изображение только для справки, пожалуйста, обратитесь к спецификации продукта

  • IRFH8318TRPBF
  • Infineon Technologies
  • MOSFET N-CH 30V 27A/120A PQFN
  • Transistors - FETs, MOSFETs - Single
  • IRFH8318TRPBF Лист данных
  • 8-PowerTDFN
  • Jinftry-Reel®
  • Lead free / RoHS Compliant,https://www.jinftry.ru/product_detail/IRFH8318TRPBFLead free / RoHS Compliant
  • 1411
  • Запасы спот / разрешенные дилеры / излишки на заводе
  • Гарантия качества на 1 год 》
  • Нажмите, чтобы узнать цены
Part Number
IRFH8318TRPBF
Category
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Description
MOSFET N-CH 30V 27A/120A PQFN
Package
Jinftry-Reel®
Series
HEXFET®
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Supplier Device Package
PQFN (5x6)
Technology
MOSFET (Metal Oxide)
Power Dissipation (Max)
3.6W (Ta), 59W (Tc)
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
27A (Ta), 120A (Tc)
Rds On (Max) @ Id, Vgs
3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3180 pF @ 10 V
Vgs (Max)
±20V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Package_case
8-PowerTDFN

IRFH8318TRPBF Гарантии

jinfftry-guarantee1,https://www.jinftry.ru/product_detail/IRFH8318TRPBF

jinfftry-guarantee2,https://www.jinftry.ru/product_detail/IRFH8318TRPBF

jinfftry-guarantee3,https://www.jinftry.ru/product_detail/IRFH8318TRPBF

• Ответьте оперативно

• Гарантированное качество

• Глобальный доступ

• Конкурентоспособная рыночная цена

• Универсальные услуги цепочки поставок

Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!

У вас есть вопросы о IRFH8318TRPBF ?
Не стесняйтесь связаться с нами:

+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )

Комментарии

Оставьте свой комментарий

Infineon Technologies
Infineon Technologies,https://www.jinftry.ru/product_detail/IRFH8318TRPBF
BSC090N03LSGATMA1,https://www.jinftry.ru/product_detail/IRFH8318TRPBF
BSC090N03LSGATMA1

MOSFET N-CH 30V 13A/48A TDSON

BSC080N03MSGATMA1,https://www.jinftry.ru/product_detail/IRFH8318TRPBF
BSC080N03MSGATMA1

MOSFET N-CH 30V 13A/48A TDSON

BSC090N03MSGATMA1,https://www.jinftry.ru/product_detail/IRFH8318TRPBF
BSC090N03MSGATMA1

MOSFET N-CH 30V 13A/48A TDSON

IRF8707GTRPBF,https://www.jinftry.ru/product_detail/IRFH8318TRPBF
IRF8707GTRPBF

MOSFET N-CH 30V 13A/48A TDSON

AUIRF7640S2TR,https://www.jinftry.ru/product_detail/IRFH8318TRPBF
AUIRF7640S2TR

MOSFET N-CH 30V 13A/48A TDSON

IRFR7446TRPBF,https://www.jinftry.ru/product_detail/IRFH8318TRPBF
IRFR7446TRPBF

MOSFET N-CH 30V 13A/48A TDSON

BSO130P03S H,https://www.jinftry.ru/product_detail/IRFH8318TRPBF
BSO130P03S H

MOSFET N-CH 30V 13A/48A TDSON

BSZ0901NS,https://www.jinftry.ru/product_detail/IRFH8318TRPBF
BSZ0901NS

MOSFET N-CH 30V 13A/48A TDSON

Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives

Silicon Rectifier Diode 1N4004 VS 1N4002 Diode Pinout, Equivalents, Data Sheet, Specifications, Prices and Alternatives 1N4004 is a silicon rectifier diode, which has the following typical parameter specifications: It is a member of the 1N400x series (1N4001-1N4007) rectifier diodes, which are often used in various electronic devices for voltage rectification, such as power converters or power adapters. 1N4002 Diode Features/Technical Specifications (Partial Parameters): The pin str

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001?

The characteristics of 1N4007 diode and 1N4001 diode, can 1N4007 be used instead of 1N4001? "1N4007" and "1N4001" are two types of diode information, which are two common rectifier diodes. 1N4007 and 1N4001 are part of a series of standard recovery time rectifier diodes, mainly used for AC (alternating current) to DC (direct current) conversion.

The latest 2N3055 transistor datasheet, application, and price analysis in 2023

2N3055 is a commonly used power transistor with a wide range of applications and reliable performance. Jinftry will introduce the detailed specifications of the 2N3055 transistor, including its datasheet, characteristics, and parameters. In addition, the application areas of the 2N3055 transistor will be discussed, and its price and market supply and demand will be discussed.

Infineon High Power Density SiC MOSFET

Infineon High Power Density SiC MOSFETs New materials are an important means for manufacturers to improve the power density of devices. We have used GaN as an example in the technical innovation part. You can use Infineon's IGO60R070D1AUMA1 to gain an in-depth understanding of this and feel the high power density performance of the product. The manufacturer of this device is on https://www.jinftry.com/ The part number is also IGO60R070D1AUMA1. Next, we will introduce another device from Infi
Индекс продукции
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
0
1
2
3
4
5
6
7
8
9
Shopping Cart Tel: +86-755-82518276 Email: sales@jinftry.com Skype: +8615019224070, annies65, +8615118125813 QQ: 568248857, 827259012, 316249462 Mobile: +8615019224070, +8615118118839, +8615118125813 WeChat: Send Message
TOP