Infineon Technologies IRF8707GTRPBF
- IRF8707GTRPBF
- Infineon Technologies
- MOSFET N-CH 30V 11A 8SO
- Transistors - FETs, MOSFETs - Single
- IRF8707GTRPBF Лист данных
- 8-SOIC (0.154\", 3.90mm Width)
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 25212
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IRF8707GTRPBF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 30V 11A 8SO |
Package Cut Tape (CT) |
Series HEXFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case 8-SOIC (0.154\", 3.90mm Width) |
Supplier Device Package 8-SO |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 2.5W (Ta) |
FET Type N-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 30 V |
Current - Continuous Drain (Id) @ 25°C 11A (Ta) |
Rds On (Max) @ Id, Vgs 11.9mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id 2.35V @ 25µA |
Gate Charge (Qg) (Max) @ Vgs 9.3 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 15 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V |
Package_case 8-SOIC (0.154\", 3.90mm Width) |
IRF8707GTRPBF Гарантии
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• Гарантированное качество
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