Infineon Technologies IRF7855PBF
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- IRF7855PBF
- Infineon Technologies
- MOSFET N-CH 60V 12A 8SO
- Transistors - FETs, MOSFETs - Single
- IRF7855PBF Лист данных
- 8-SOIC (0.154\", 3.90mm Width)
- Tube
-
Lead free / RoHS Compliant - 2710
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IRF7855PBF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 60V 12A 8SO |
| Package Tube |
| Series HEXFET® |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-SOIC (0.154\", 3.90mm Width) |
| Supplier Device Package 8-SO |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 2.5W (Ta) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 60 V |
| Current - Continuous Drain (Id) @ 25°C 12A (Ta) |
| Rds On (Max) @ Id, Vgs 9.4mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id 4.9V @ 100µA |
| Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1560 pF @ 25 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case 8-SOIC (0.154\", 3.90mm Width) |
IRF7855PBF Гарантии
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