Fairchild Semiconductor FDP18N20F
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- FDP18N20F
- Fairchild Semiconductor
- POWER FIELD-EFFECT TRANSISTOR, 1
- Transistors - FETs, MOSFETs - Single
- FDP18N20F Лист данных
- TO-220-3
- Bulk
-
Lead free / RoHS Compliant - 4588
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number FDP18N20F |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Fairchild Semiconductor |
| Description POWER FIELD-EFFECT TRANSISTOR, 1 |
| Package Bulk |
| Series UniFET™ |
| Operating Temperature -55°C ~ 150°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220-3 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 100W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 18A (Tc) |
| Rds On (Max) @ Id, Vgs 145mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 26 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 1.18 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
FDP18N20F Гарантии
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