Infineon Technologies IRF5210LPBF
- IRF5210LPBF
- Infineon Technologies
- MOSFET P-CH 100V 38A TO262
- Transistors - FETs, MOSFETs - Single
- IRF5210LPBF Лист данных
- TO-262-3 Long Leads, I²Pak, TO-262AA
- Tube
- Lead free / RoHS Compliant
- 10750
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IRF5210LPBF |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET P-CH 100V 38A TO262 |
Package Tube |
Series HEXFET® |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Through Hole |
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Supplier Device Package TO-262 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 3.1W (Ta), 170W (Tc) |
FET Type P-Channel |
FET Feature - |
Drain to Source Voltage (Vdss) 100 V |
Current - Continuous Drain (Id) @ 25°C 38A (Tc) |
Rds On (Max) @ Id, Vgs 60mOhm @ 38A, 10V |
Vgs(th) (Max) @ Id 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 25 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 10V |
Package_case TO-262-3 Long Leads, I²Pak, TO-262AA |
IRF5210LPBF Гарантии
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• Гарантированное качество
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