Infineon Technologies IRFB31N20DPBF
Изображение только для справки, пожалуйста, обратитесь к спецификации продукта
- IRFB31N20DPBF
- Infineon Technologies
- MOSFET N-CH 200V 31A TO220AB
- Transistors - FETs, MOSFETs - Single
- IRFB31N20DPBF Лист данных
- TO-220-3
- Bulk
-
Lead free / RoHS Compliant - 736
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Службы доставки:
Способы оплаты:
| Part Number IRFB31N20DPBF |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 200V 31A TO220AB |
| Package Bulk |
| Series HEXFET® |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Through Hole |
| Package / Case TO-220-3 |
| Supplier Device Package TO-220AB |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.1W (Ta), 200W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 200 V |
| Current - Continuous Drain (Id) @ 25°C 31A (Tc) |
| Rds On (Max) @ Id, Vgs 82mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id 5.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 2370 pF @ 25 V |
| Vgs (Max) ±30V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-220-3 |
IRFB31N20DPBF Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IRFB31N20DPBF ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
IRFB31N20DPBF сопутствующие товары
Комментарии
Infineon Technologies
IRFS4115TRL7PP
MOSFET N-CH 150V 105A D2PAK
IRL3705NPBF
MOSFET N-CH 150V 105A D2PAK
IRFP250MPBF
MOSFET N-CH 150V 105A D2PAK
IRFI1010NPBF
MOSFET N-CH 150V 105A D2PAK
IPB60R160C6
MOSFET N-CH 150V 105A D2PAK
IPP060N06NAKSA1
MOSFET N-CH 150V 105A D2PAK
IRF3808STRLPBF
MOSFET N-CH 150V 105A D2PAK
SPW24N60C3
MOSFET N-CH 150V 105A D2PAK
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ，Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
