Infineon Technologies IPTG011N08NM5ATMA1
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- IPTG011N08NM5ATMA1
- Infineon Technologies
- TRENCH 40<-<100V PG-HSOG-8
- Transistors - FETs, MOSFETs - Single
- IPTG011N08NM5ATMA1 Лист данных
- 8-PowerSMD, Gull Wing
- Jinftry-Reel®
-
Lead free / RoHS Compliant - 1327
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IPTG011N08NM5ATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description TRENCH 40<-<100V PG-HSOG-8 |
| Package Jinftry-Reel® |
| Series OptiMOS™ 5 |
| Operating Temperature -55°C ~ 175°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case 8-PowerSMD, Gull Wing |
| Supplier Device Package PG-HSOG-8-1 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 3.8W (Ta), 375W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 80 V |
| Current - Continuous Drain (Id) @ 25°C 42A (Ta), 408A (Tc) |
| Rds On (Max) @ Id, Vgs 1.1mOhm @ 150A, 10V |
| Vgs(th) (Max) @ Id 3.8V @ 280µA |
| Gate Charge (Qg) (Max) @ Vgs 223 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 17000 pF @ 40 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 6V, 10V |
| Package_case 8-PowerSMD, Gull Wing |
IPTG011N08NM5ATMA1 Гарантии
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Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i
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