Infineon Technologies IPBE65R050CFD7AATMA1
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- IPBE65R050CFD7AATMA1
- Infineon Technologies
- MOSFET N-CH 650V 45A TO263-7
- Transistors - FETs, MOSFETs - Single
- IPBE65R050CFD7AATMA1 Лист данных
- TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
- Cut Tape (CT)
-
Lead free / RoHS Compliant - 15791
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
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| Part Number IPBE65R050CFD7AATMA1 |
| Category Transistors - FETs, MOSFETs - Single |
| Manufacturer Infineon Technologies |
| Description MOSFET N-CH 650V 45A TO263-7 |
| Package Cut Tape (CT) |
| Series Automotive, AEC-Q101, CoolMOS™ CFD7A |
| Operating Temperature -40°C ~ 150°C (TJ) |
| Mounting Type Surface Mount |
| Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
| Supplier Device Package PG-TO263-7-3-10 |
| Technology MOSFET (Metal Oxide) |
| Power Dissipation (Max) 227W (Tc) |
| FET Type N-Channel |
| FET Feature - |
| Drain to Source Voltage (Vdss) 650 V |
| Current - Continuous Drain (Id) @ 25°C 45A (Tc) |
| Rds On (Max) @ Id, Vgs 50mOhm @ 24.8A, 10V |
| Vgs(th) (Max) @ Id 4.5V @ 1.24mA |
| Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds 4975 pF @ 400 V |
| Vgs (Max) ±20V |
| Drive Voltage (Max Rds On, Min Rds On) 10V |
| Package_case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
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