Infineon Technologies IPD50R500CEBTMA1
- IPD50R500CEBTMA1
- Infineon Technologies
- MOSFET N-CH 500V 7.6A TO252-3
- Transistors - FETs, MOSFETs - Single
- IPD50R500CEBTMA1 Лист данных
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Cut Tape (CT)
- Lead free / RoHS Compliant
- 4440
- Запасы спот / разрешенные дилеры / излишки на заводе
- Гарантия качества на 1 год 》
- Нажмите, чтобы узнать цены
Part Number IPD50R500CEBTMA1 |
Category Transistors - FETs, MOSFETs - Single |
Manufacturer Infineon Technologies |
Description MOSFET N-CH 500V 7.6A TO252-3 |
Package Cut Tape (CT) |
Series CoolMOS™ |
Operating Temperature -55°C ~ 150°C (TJ) |
Mounting Type Surface Mount |
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package PG-TO252-3-11 |
Technology MOSFET (Metal Oxide) |
Power Dissipation (Max) 57W (Tc) |
FET Type N-Channel |
FET Feature Super Junction |
Drain to Source Voltage (Vdss) 500 V |
Current - Continuous Drain (Id) @ 25°C 7.6A (Tc) |
Rds On (Max) @ Id, Vgs 500mOhm @ 2.3A, 13V |
Vgs(th) (Max) @ Id 3.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs 18.7 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds 433 pF @ 100 V |
Vgs (Max) ±20V |
Drive Voltage (Max Rds On, Min Rds On) 13V |
Package_case TO-252-3, DPak (2 Leads + Tab), SC-63 |
IPD50R500CEBTMA1 Гарантии
• Ответьте оперативно
• Гарантированное качество
• Глобальный доступ
• Конкурентоспособная рыночная цена
• Универсальные услуги цепочки поставок
Jinftry, это ваш самый надежный поставщик компонентов, добро пожаловать, чтобы отправить нам запрос, спасибо!
У вас есть вопросы о IPD50R500CEBTMA1 ?
Не стесняйтесь связаться с нами:
+86-755-82518276
+8615019224070, annies65, +8615118125813
568248857, 827259012, 316249462
+8615019224070, +8615118118839, +8615118125813
( Электронная почта в первую очередь )
Комментарии
Infineon Technologies
IRFH7191TRPBF
MOSFET N-CH 100V 15A/80A PQFN
IPD068P03L3GATMA1
MOSFET N-CH 100V 15A/80A PQFN
IRFR9N20DTRPBF
MOSFET N-CH 100V 15A/80A PQFN
BSZ900N15NS3 G
MOSFET N-CH 100V 15A/80A PQFN
IPD180N10N3GATMA1
MOSFET N-CH 100V 15A/80A PQFN
IRLHM620TRPBF
MOSFET N-CH 100V 15A/80A PQFN
IRFH8311TRPBF
MOSFET N-CH 100V 15A/80A PQFN
IRF8113TRPBF
MOSFET N-CH 100V 15A/80A PQFN
What is a power module
What is a power module Features of the power module Power drive module role What are the power drive modules ,Provide you with power drive modules,A Power Module is a highly integrated electronic device that controls and converts electrical energy. It usually includes multiple power semiconductor devices (such as IGBTs, MOSFETs, diodes, etc.),
Introduction to Semiconductor Discrete Devices
Introduction to Semiconductor Discrete Devices
Semiconductor discrete devices refer to semiconductor crystal diodes, semiconductor transistors, transistors, transistors and semiconductor special devices.
Introduction to Semiconductor Discrete Devices
Electronic products are divided into "conductors" and "insulators" according to their conductive properties. Semiconductors are between "conductors" and "insulators". Semiconductor components are furthe
What is a bipolar transistor and what is its operating mode
What is a bipolar transistor
How bipolar transistors work
Bipolar junction transistor four modes of operation
Bipolar transistor development applications
What is a bipolar transistor
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
SiC helps the application of power semiconductor devices to increase junction temperature, which will greatly change the design pattern of power systems.
Since the birth of silicon power semiconductor devices, application demands have been driving the junction temperature to rise, which has now reached 150°C. With the emergence of third-generation wide-bandgap semiconductor devices (such as SiC) and their increasing maturity and full commercialization, their unique high-temperature resistance i